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≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the framework is cycled by way of oxidizing and annealing levels. Due to the preferential oxidation of Si about Ge [68], the initial Si1–Nghiên cứu của FDA Ä‘Æ°a ra kết luận rằng germani, khi sá»­ đụng nhÆ° là cháº