Getting My N type Ge To Work
≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the framework is cycled by way of oxidizing and annealing levels. Due to the preferential oxidation of Si about Ge [68], the initial Si1–Nghiên cứu của FDA Ä‘Æ°a ra kết luáºn rằng germani, khi sỠđụng nhÆ° là cháº